O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax D.

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.

IRF2807Z

IRF2807ZL

IRF2807ZLPBF

IRF2807ZPBF

IRF2807ZSPBF

IRF2807

IRF2807L

IRF2807LPbF

IRF2807PbF

IRF2807S

IRF2807SPbF

IRF2804

IRF2804L