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IRF3315L Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the IRF3315L datasheet PDF. This datasheet also includes the IRF3315S variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF3315S_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.

Overview

PD - 9.1617A PRELIMINARY l l l l l l IRF3315S/L HEXFET® Power MOSFET D Advanced Process Technology Surface Mount (IRF3315S) Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 150V G S RDS(on) = 0.

Key Features

  • D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X Part Marking Information D2Pak IN TE R N A T IO N A L R E C TIF IE R LOGO.