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IRF3315S - N-Channel MOSFET

Datasheet Summary

Features

  • With To-263(D2PAK) package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRF3315S

Datasheet Details

Part number IRF3315S
Manufacturer INCHANGE
File Size 253.87 KB
Description N-Channel MOSFET
Datasheet download datasheet IRF3315S Datasheet
Additional preview pages of the IRF3315S datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor IRF3315S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 21 15 84
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