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IRF3315L - Power MOSFET

Download the IRF3315L datasheet PDF. This datasheet also covers the IRF3315S variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X Part Marking Information D2Pak IN TE R N A T IO N A L R E C TIF IE R LOGO.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF3315S_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF3315L N-Channel MOSFET INCHANGE
IRF3315 N-Channel MOSFET INCHANGE
IRF3315S N-Channel MOSFET INCHANGE
IRF331 N-Channel MOSFET Transistor Inchange Semiconductor
IRF331 N-Channel Power MOSFET Fairchild Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF3315LPbF HEXFET Power MOSFET
IRF3315 N-Channel Power MOSFET
IRF3315S Power MOSFET
IRF3315SPbF HEXFET Power MOSFET
IRF330 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 9.1617A PRELIMINARY l l l l l l IRF3315S/L HEXFET® Power MOSFET D Advanced Process Technology Surface Mount (IRF3315S) Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 150V G S RDS(on) = 0.082Ω ID = 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.