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IRF3710ZL - HEXFET Power MOSFET

This page provides the datasheet information for the IRF3710ZL, a member of the IRF3710Zxx HEXFET Power MOSFET family.

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free.

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Datasheet preview – IRF3710ZL

Datasheet Details

Part number IRF3710ZL
Manufacturer International Rectifier
File Size Direct Link
Description HEXFET Power MOSFET
Datasheet download datasheet IRF3710ZL Datasheet
Additional preview pages of the IRF3710ZL datasheet.

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Full PDF Text Transcription

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PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
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