l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l.

IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 18mΩ G ID = 59A S TO-220AB D2P.

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.

IRF3710Z

IRF3710ZGPbF

IRF3710ZLPbF

IRF3710ZPbF

IRF3710ZS

IRF3710ZSPbF

IRF3710

IRF3710L

IRF3710LPBF

IRF3710PbF

IRF3710S

IRF3710SPBF

IRF3711

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts