* of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of ot
IRF3808
International Rectifier
131.04 KB
Power mosfet.
PD - 94291B AUTOMOTIVE MOSFET Typical Applications q q IRF3808 HEXFET® Power MOSFET D Integrated Starter Alternator 42 Volts Automotive Electrical .
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