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IRF3808LPBF Datasheet AUTOMOTIVE MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the IRF3808LPBF datasheet PDF. This datasheet also includes the IRF3808SPBF variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRF3808SPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Additional

Overview

( DataSheet : www.DataSheet4U.com ) PD - 95467 AUTOMOTIVE MOSFET Typical Applications ● ● ● IRF3808SPbF IRF3808LPbF D Integrated Starter Alternator 42 Volts Automotive Electrical Systems Lead-Free Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET® Power MOSFET VDSS = 75V RDS(on) = 0.

Key Features

  • of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other.

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