Datasheet4U Logo Datasheet4U.com

IRF3808L - N-Channel MOSFET

Features

  • With To-262 package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IRF3808L

Datasheet Details

Part number IRF3808L
Manufacturer INCHANGE
File Size 252.34 KB
Description N-Channel MOSFET
Datasheet download datasheet IRF3808L Datasheet
Additional preview pages of the IRF3808L datasheet.

📁 Similar Datasheet

  • IRF3808L - Power MOSFET (International Rectifier)
  • IRF3808LPBF - AUTOMOTIVE MOSFET (International Rectifier)
  • IRF3808 - Power MOSFET (International Rectifier)
  • IRF3808PBF - Power MOSFET (International Rectifier)
  • IRF3808S - Power MOSFET (International Rectifier)
  • IRF3808S - N-Channel MOSFET (Kexin)
  • IRF3808SPBF - AUTOMOTIVE MOSFET (International Rectifier)
  • IRF3805 - Power MOSFET (International Rectifier)
  • IRF3805L - Power MOSFET (International Rectifier)
  • IRF3805L-7PPbF - Power MOSFET (International Rectifier)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGSS Gate-Source Voltage ±20 V ID Drain Current-ContinuousTc=25℃ Tc=100℃ 106 75 A IDM Drain Current-Single Pulsed 550 A PD Total Dissipation @TC=25℃ 200 W Tch Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
Published: |