IRF3808LPBF - AUTOMOTIVE MOSFET

Product Overview

International Rectifier

Datasheet Details

Part number	IRF3808LPBF
Manufacturer	International Rectifier
File Size	352.86 KB
Description	AUTOMOTIVE MOSFET
Datasheet	IRF3808LPBF Datasheet
Note	This datasheet PDF includes multiple part numbers: IRF3808LPBF, IRF3808SPBF. Please refer to the document for exact specifications by model.
Additional preview pages of the IRF3808LPBF datasheet.

Product details

Description

Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.Additional

Features

of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other.

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Other Datasheets by International Rectifier

IRF3808L - Power MOSFET
IRF3808 - Power MOSFET
IRF3808PBF - Power MOSFET
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IRF3808SPBF - AUTOMOTIVE MOSFET
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Published: Apr 24, 2006 |