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IRF3808S Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 94338A AUTOMOTIVE MOSFET Typical Applications q q IRF3808S IRF3808L HEXFET® Power MOSFET D Integrated Starter Alternator 42 Volts Automotive Electrical Systems Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Benefits q q q q q q VDSS = 75V G S RDS(on) = 0.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Additional

Key Features

  • of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other.

IRF3808S Distributor