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IRF3808S - Power MOSFET

Download the IRF3808S datasheet PDF. This datasheet also covers the IRF3808L variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF3808L_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF3808S N-Channel MOSFET INCHANGE
IRF3808S N-Channel MOSFET Kexin
IRF3808 N-Channel MOSFET INCHANGE
IRF3808L N-Channel MOSFET INCHANGE
IRF3805 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF3808SPBF AUTOMOTIVE MOSFET
IRF3808 Power MOSFET
IRF3808L Power MOSFET
IRF3808LPBF AUTOMOTIVE MOSFET
IRF3808PBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 94338A AUTOMOTIVE MOSFET Typical Applications q q IRF3808S IRF3808L HEXFET® Power MOSFET D Integrated Starter Alternator 42 Volts Automotive Electrical Systems Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Benefits q q q q q q VDSS = 75V G S RDS(on) = 0.007Ω ID = 106AV Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating.