IRF3808SPBF Datasheet | International Rectifier

Description Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This bination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications. Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy‡ Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds D2Pak IRF3808S TO-262 IRF3808L Max. 106† 75 † 550 200 1.3 ± 20 430 82 See Fig.12a, 12b, 15, 16 5.5 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V m J A m J V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mounted, Steady State)- - Typ. - - - - - - Max. 0.75 40 Units °C/W HEXFET(R) is a registered trademark of International Rectifier. .irf. 6/30/04 .. .. IRF3808S/LPb F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time...