| Part Number | IRF3808S Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. . of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of ot. |
IRF3808S Datasheet and Specifications PDF
The IRF3808S is a Power MOSFET.
| Part Number | IRF3808S Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type N-Channel MOSFET IRF3808S (KRF3808S) Ƶ Features ƽ VDSS = 75V ƽ RDS(ON) = 0.007 ƽ ID = 106A ļ ƽ Advanced Process Technology ƽ Ultra Low On-Resistance ƽ Dynamic dv/dt Rating ƽ 175°C Operating . ƽ VDSS = 75V ƽ RDS(ON) = 0.007 ƽ ID = 106A ļ ƽ Advanced Process Technology ƽ Ultra Low On-Resistance ƽ Dynamic dv/dt Rating ƽ 175°C Operating Temperature ƽ Fast Switching ƽ Repetitive Avalanche Allowed up to Tjmax D TraMnOsiSsFtoErsT G S Ƶ Absolute Maximum Ratings Ta = 25ć Drain-Source Voltage . |
| Part Number | IRF3808S Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc N-Channel MOSFET Transistor
IRF3808S
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations.
*With To-263(D2PAK) package *Low input capacitance and gate charge *Low gate input resistance *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE . |