IRF3808
Overview
This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating.
- VDSS = 75V RDS(on) = 0.007Ω ID = 140A S TO-220AB
