IRF3808PBF Datasheet | International Rectifier

- 94972A IRF3808Pb F Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating G l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional Features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This bination makes the design an extremely efficient and reliable choice for use in a wide variety of applications. HEXFET® Power MOSFET VDSS = 75V RDS(on) = 0.007Ω ID =...