Datasheet4U Logo Datasheet4U.com

IRF3808PBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Additional

Overview

PD - 94972A IRF3808PbF Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating G l 175°C Operating Temperature l Fast Switching l Repetitive.

Key Features

  • of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in a wide variety of.