IRF4905LPBF mosfet equivalent, hexfet power mosfet.
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HEXFET® Power MOSFET
D
O
Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to .
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G
D
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D2Pak IRF4905SPbF
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TO-262 IRF4905LPbF
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Absolute Maximum Ratings
Parameter
Gate
Drain
Max.
-.
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of oth.
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