type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse .

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .

IRF520

IRF520A

IRF520FI

IRF520L

IRF520NL

IRF520NLPBF

IRF520NPbF

IRF520NS

IRF520NSPBF

IRF520S

IRF520V

IRF520VL

IRF520VPBF