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International Rectifier Electronic Components Datasheet

IRF540NLPbF Datasheet

Power MOSFET

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l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
G
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low-
profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V ‡
Continuous Drain Current, VGS @ 10V ‡
Pulsed Drain Current ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)**
www.irf.com
PD - 95130
IRF540NSPbF
IRF540NLPbF
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 44m
ID = 33A
S
D2Pak
TO-262
IRF540NSPbF IRF540NLPbF
Max.
33
23
110
130
0.87
± 20
16
13
7.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
1.15
40
Units
°C/W
1
3/18/04


International Rectifier Electronic Components Datasheet

IRF540NLPbF Datasheet

Power MOSFET

No Preview Available !

IRF540NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
EAS
Single Pulse Avalanche Energy‚‡
Min. Typ. Max. Units
100 ––– ––– V
––– 0.12 ––– V/°C
––– ––– 44 m
2.0 ––– 4.0 V
21 ––– ––– S
––– ––– 25 µA
––– ––– 250
––– ––– 100
nA
––– ––– -100
––– ––– 71
––– ––– 14 nC
––– ––– 21
––– 11 –––
––– 35 –––
ns
––– 39 –––
––– 35 –––
––– 4.5 –––
nH
––– 7.5 –––
––– 1960 –––
––– 250 –––
––– 40 ––– pF
––– 700… 185† mJ
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA ‡
VGS = 10V, ID = 16A „
VDS = VGS, ID = 250µA
VDS = 50V, ID = 16A„‡
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 16A
VDS = 80V
VGS = 10V, See Fig. 6 and 13
VDD = 50V
„‡
ID = 16A
RG = 5.1
VGS = 10V, See Fig. 10 „‡
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5 ‡
IAS = 16A, L = 1.5mH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting TJ = 25°C, L =1.5mH
RG = 25, IAS = 16A. (See Figure 12)
ƒ ISD ≤ 16A, di/dt 340A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 400µs; duty cycle 2%.
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 33
A showing the
integral reverse
G
––– ––– 110
p-n junction diode.
S
––– ––– 1.2 V TJ = 25°C, IS = 16A, VGS = 0V „
––– 115 170 ns TJ = 25°C, IF = 16A
––– 505 760 nC di/dt = 100A/µs „‡
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Uses IRF540N data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
2
www.irf.com



Part Number IRF540NLPbF
Description Power MOSFET
Maker International Rectifier
Total Page 3 Pages
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