These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
Full PDF Text Transcription for IRF5803PbF (Reference)
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PD-95262B IRF5803PbF HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-...
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face Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free D D VDSS -40V RDS(on) max (mW) 112@VGS = -10V 190@VGS = -4.5V ID -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where
IRF5803PbF Datasheet
