IRF5803PbF Datasheet | Infineon

Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized lead frame produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% pared to the SOT-23. VDSS - 40V IRF5803Pb F HEXFET® Power MOSFET RDS(on) (max) 112m@ VGS = -10V 190m@ VGS = -4.5V ID -3.4A -2.7A D1 D2 5D G3 4S Top View G Gate D Drain TSOP-6 IRF5803Pb F S Source Base part number IRF5803Pb F Package Type TSOP-6 Standard Pack Form Quantity Tape and Reel Orderable Part Number IRF5803TRPb F Absolute Maximum Ratings Symbol Parameter VDS Drain-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ -10V ID @ TA = 70°C IDM PD @TA= 25°C Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Maximum Power Dissipation  PD @TA= 70°C Maximum Power Dissipation  Linear Derating Factor VGS TJ TSTG Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max....