IRF5803
IRF5803 is Power MOSFET manufactured by International Rectifier.
Description
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% pared to the SOT-23.
VDSS
-40V
PD-95262B
IRF5803Pb F
HEXFET® Power MOSFET
RDS(on) max (m W)
112@VGS = -10V 190@VGS = -4.5V
-3.4A -2.7A
Top View
TSOP-6
Absolute Maximum Ratings
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C
VGS TJ, TSTG
Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation
- Power Dissipation
- Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient-
Max. -40 -3.4 -2.7 -27 2.0 1.3 16 ± 20 -55 to + 150
Max. 62.5
Units V
W m W/°C
V °C
Units °C/W
.irf.
04/20/10
IRF5803Pb F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp....
