| Part number | IRF5803PbF |
|---|---|
| Datasheet | IRF5803PbF-InternationalRectifier.pdf |
| File Size | 199.19 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | Power MOSFET |
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These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
IRF5803PbF | Power MOSFET | Infineon |
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IRF5803 | Power MOSFET | Infineon |
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRF5803 | Power MOSFET |
| IRF5803D2 | FETKY MOSFET |
| IRF5803D2PbF | Power MOSFET & Schottky Diode |
| IRF5800 | Power MOSFET |
| IRF5800PBF | Power MOSFET |
| IRF5801 | Power MOSFET |
| IRF5801PbF | Power MOSFET |
| IRF5801PBF-1 | Power MOSFET |
| IRF5802 | Power MOSFET |
| IRF5802PbF | Power MOSFET |
