IRF5803D2PbF Datasheet | International Rectifier

Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. bining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. Top View SO-8 Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current À Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum -3.4 -2.7 -27 2.0 1.3 16 ± 20 -55 to +150 Units W m W/°C V °C Thermal Resistance Symbol RθJL RθJA RθJA Parameter Junction-to-Drain Lead, MOSFET Junction-to-Ambient - , MOSFET Junction-to-Ambient - , SCHOTTKY Typ. - - - - - - - - - Max. 20 62.5 62.5 Units °C/W Notes:  Repetitive rating - pulse width limited by max. junction temperature (see fig. 11) ‚ Pulse width ≤ 400µs - duty cycle ≤ 2% - Surface mounted on 1 inch square copper board, t ≤ 10sec. .irf. 10/7/04 IRF5803D2Pb F V(BR)DSS ∆V(BR)DSS/∆TJ Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time...