IRF5803D2PbF - Power MOSFET & Schottky Diode

Product Overview

International Rectifier

Datasheet Details

Part number	IRF5803D2PbF
Manufacturer	International Rectifier
File Size	139.57 KB
Description	Power MOSFET & Schottky Diode
Datasheet	IRF5803D2PbF Datasheet
Additional preview pages of the IRF5803D2PbF datasheet.

Product details

Description

The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications.

Features

t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 180 Allowable Ambient Temprature - (°C) 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 RthJA = 62.5 °C/W DC see note (4) Square wave ( D = 0.50) 80 % Rated V R applied Average Forward Current - F(AV) I (A) Fig.21 - Maximum Allowable Ambient Temp. Vs. Forward Current Note (4) Formula used: TC = TJ - (Pd + PdREV) x RthJA ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) ; Pd.

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Published: Sep 18, 2014 |