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International Rectifier Electronic Components Datasheet

IRF6100 Datasheet

HEXFET Power MOSFET

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l Ultra Low RDS(on) per Footprint Area
l Low Thermal Resistance
l P-Channel MOSFET
l One-third Footprint of SOT-23
l Super Low Profile (<.8mm)
l Available Tested on Tape & Reel
VDSS
-20V
PD - 93930F
IRF6100
HEXFET® Power MOSFET
RDS(on) max
0.065@VGS = -4.5V
0.095@VGS = -2.5V
ID
-5.1A
-4.1A
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques, and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design , that International Rectifier
is well known for, provides the designer with an ex-
tremely efficient and reliable device.
G
The FlipFETpackage, is one-third the footprint of a
comparable SOT-23 package and has a profile of less
than .8mm. Combined with the low thermal resistance of
the die level device, this makes the FlipFETthe best
device for application where printed circuit board space is
at a premium and in extremely thin application environ-
ments such as battery packs, cell phones and PCMCIA
cards.
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipationƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
D
S FlipFET™ ISOMETRIC
Max.
-20
±5.1
±3.5
±35
2.2
1.4
17
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RθJA
RθJ-PCB
www.irf.com
Parameter
Junction-to-Ambientƒ
Junction-to-PCB mounted
Typ.
35
Max.
56.5
–––
Units
°C/W
1
07/13/06


International Rectifier Electronic Components Datasheet

IRF6100 Datasheet

HEXFET Power MOSFET

No Preview Available !

IRF6100
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-20 ––– –––
––– -0.010 –––
––– ––– 0.065
––– ––– 0.095
-0.45 ––– -1.2
9.8 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– 100
––– ––– -100
––– 14 21
––– 1.9 2.9
––– 5.0 7.5
––– 12 –––
––– 12 –––
––– 50 –––
––– 50 –––
––– 1230 –––
––– 250 –––
––– 180 –––
V
V/°C
V
S
µA
nA
nC
ns
pF
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -5.1A ‚
VGS = -2.5V, ID = -4.1A ‚
VDS = VGS, ID = -250µA
VDS = -10V, ID = -5.1A
VDS = -20V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
ID = -5.1A
VDS = -16V
VGS = -5.0V
VDD = -10V
ID = -1.0A
RG = 5.8
VGS = -4.5V ‚
VGS = 0V
VDS = -15V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
48
34
Max.
-2.2
-33
-1.2
72
51
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -2.2A, VGS = 0V ‚
TJ = 25°C, IF = -2.2A
di/dt = 100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ When mounted on 1 inch square 2oz copper on FR-4.
2 www.irf.com


Part Number IRF6100
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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