Datasheet Summary
- 96012B
HEXFET® Power MOSFET l l l l l l l
Ultra Low RDS(on) per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel Lead-Free
VDSS
-20V
RDS(on) max
0.065Ω@VGS = -4.5V 0.095Ω@VGS = -2.5V
-5.1A -4.1A
Description
True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, bined with the ruggedized device design , that...