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IRF6100 - HEXFET Power MOSFET

General Description

True chip-scale packaging is available from International Rectifier.

Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6100PBF HEXFET Power MOSFET
IRF614 power mosfet
IRF614PBF hexfet power mosfet
IRF614SPBF HEXFET Power MOSFET
IRF6150 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.8mm) l Available Tested on Tape & Reel VDSS -20V PD - 93930F IRF6100 HEXFET® Power MOSFET RDS(on) max 0.065Ω@VGS = -4.5V 0.095Ω@VGS = -2.5V ID -5.1A -4.1A Description True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device.