Datasheet Summary
l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.8mm) l Available Tested on Tape & Reel
VDSS
-20V
- 93930F
HEXFET® Power MOSFET
RDS(on) max
0.065Ω@VGS = -4.5V
0.095Ω@VGS = -2.5V
-5.1A
-4.1A
Description
True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, bined with the ruggedized device design , that International...