| Part | IRF610B |
|---|---|
| Description | 200V N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Size | 867.00 KB |
Package: TO-220
Max Operating Temp: 150 °C
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Verical | 3320 | 842+ : 0.4459 USD 1000+ : 0.4111 USD 10000+ : 0.3666 USD 100000+ : 0.3071 USD |
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| Rochester Electronics | 3625 | 100+ : 0.3963 USD 500+ : 0.3567 USD 1000+ : 0.3289 USD 10000+ : 0.2933 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IRF610 | International Rectifier | Power MOSFET |
| IRF6100 | International Rectifier | HEXFET Power MOSFET |
| IRF610 | Inchange Semiconductor | N-Channel Mosfet Transistor |
| IRF610 | Intersil | N-Channel Power MOSFET |
| IRF6100PBF | International Rectifier | HEXFET Power MOSFET |