IRF610A
IRF610A is manufactured by Fairchild Semiconductor.
Advanced Power MOSFET
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ.)
1 2 3
BVDSS = 200 V RDS(on) = 1.5 Ω ID = 3.3 A
TO-220
1.Gate 2. Drain 3....
