Datasheet4U.com

IRF614S - Power MOSFET

Product Overview

Fairchild Semiconductor

📥 Download Datasheet

IRF614S Power MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRF614S

Datasheet Details

Part number	IRF614S
Manufacturer	Fairchild Semiconductor
File Size	230.20 KB
Description	Power MOSFET
Datasheet	IRF614S Datasheet
Additional preview pages of the IRF614S datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 250V.
Lower RDS(ON): 1.393Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (.

📁 Similar Datasheet

IRF614SPBF - HEXFET Power MOSFET (International Rectifier)
IRF614 - N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF614A - Power MOSFET (Samsung)
IRF614PBF - hexfet power mosfet (International Rectifier)
IRF610 - N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF6100 - HEXFET Power MOSFET (International Rectifier)
IRF6100PBF - HEXFET Power MOSFET (International Rectifier)
IRF610A - N-Channel Mosfet Transistor (Inchange Semiconductor)

Other Datasheets by Fairchild Semiconductor

IRF614B - 250V N-Channel MOSFET
IRF610B - 200V N-Channel MOSFET
IRF611 - N-Channel Power MOSFET
IRF612 - N-Channel Power MOSFET
IRF613 - N-Channel Power MOSFET
IRF620 - N-Channel Power MOSFET

Published: Aug 4, 2016 |