IRF614 Datasheet | Intersil

January 1998 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. This power MOSFET is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA17443. Features - 2.0A, 250V - rDS(ON) = 2.0Ω - Single Pulse...