IRF614 Overview
Key Specifications
Package: TO-220-3
Mount Type: Through Hole
Pins: 3
Height: 9.01 mm
Description
This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
Key Features
- rDS(ON) = 2.0Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
