Datasheet Details
| Part number | IRF614 |
|---|---|
| Manufacturer | Intersil (now Renesas) |
| File Size | 45.10 KB |
| Description | N-Channel Power MOSFET |
| Datasheet | IRF614_IntersilCorporation.pdf |
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Overview: IRF614 January 1998 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET.
| Part number | IRF614 |
|---|---|
| Manufacturer | Intersil (now Renesas) |
| File Size | 45.10 KB |
| Description | N-Channel Power MOSFET |
| Datasheet | IRF614_IntersilCorporation.pdf |
|
|
|
This is an N-Channel enhancement mode silicon gate power field effect transistor.
It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
This power MOSFET is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRF614 | N-Channel Mosfet Transistor | Inchange Semiconductor |
 |
IRF614 | power mosfet | International Rectifier |
 |
IRF614 | Power MOSFET | Vishay |
 |
IRF614A | Power MOSFET | Samsung |
 |
IRF614B | 250V N-Channel MOSFET | Fairchild Semiconductor |
| Part Number | Description |
|---|---|
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