IRF614 Datasheet and Specifications PDF

INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF61.

*Low RDS(on)
*VGS Rated at ±20V
*Silicon Gate for Fast Switching Speed
*Rugged
*Low Drive Requirements isc Product Specification IRF614
*DESCRITION
*Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse.
*ABSOL.

This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdow.

* 2.0A, 250V
* rDS(ON) = 2.0Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Order.

.

.

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is.

* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* Fast switching
* Ease of paralleling Available
* Simple drive requirements
* Material categorization: for definitions of compliance please see Note * This datasheet provides information about parts that .