IRF610A Datasheet and Specifications PDF

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ.) 1 2 3 IRF610A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 3.3 A TO-220 1.Gate 2. Drain 3. Source .

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous .

*Low RDS(on) = 1.25Ω(TYP)
*Lower Input Capacitance
*Improved Gate Charge
*Extended Safe Operating Area
*Rugged Gate Oxide Technology DESCRIPTION
*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source.