Datasheet4U Logo Datasheet4U.com

IRF610A Datasheet N-channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.

General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.

Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 200 ±20 V V 3.3 A 10 A 38 W -55~150 -55~150 ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 3.68 62.5 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF610A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

Key Features

  • Low RDS(on) = 1.25Ω(TYP).
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Rugged Gate Oxide Technology.

IRF610A Distributor & Price

Compare IRF610A distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.