IRF610A - N-Channel Mosfet Transistor

Inchange Semiconductor

General Description

purpose applications.

Key Features

Low RDS(on) = 1.25Ω(TYP).
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Rugged Gate Oxide Technology.

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IRF610A n-channel mosfet transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IRF610A
Manufacturer	Inchange Semiconductor
File Size	62.50 KB
Description	N-Channel Mosfet Transistor
Datasheet	IRF610A Datasheet

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF610A FEATURES ·Low RDS(on) = 1.25Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 200 ±20 V V 3.