IRF610A Datasheet (Inchange Semiconductor)

Part IRF610A
Description N-Channel Mosfet Transistor
Category MOSFET
Manufacturer Inchange Semiconductor
Size 62.50 KB
IRF610A Datasheet (PDF) Download
Pricing from 0.2642 USD, available from Rochester Electronics and Worldway Electronics.
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Inchange Semiconductor

IRF610A Overview

Key Specifications

Max Operating Temp: 150 °C

Description

Designed for use in switch mode power supplies and general purpose applications. SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.

Key Features

  • Low RDS(on) = 1.25Ω(TYP)
  • Lower Input Capacitance
  • Improved Gate Charge
  • Extended Safe Operating Area
  • Rugged Gate Oxide Technology
IRF610A datasheet preview

Price & Availability

Seller Inventory Price Breaks Buy
Rochester Electronics 1000 100+ : 0.2642 USD
500+ : 0.2378 USD
1000+ : 0.2193 USD
10000+ : 0.1955 USD		 View Offer
Worldway Electronics 28689 7+ : 0.0748 USD
10+ : 0.0733 USD
100+ : 0.0711 USD
500+ : 0.0688 USD		 View Offer

Related Datasheets

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IRF610A Fairchild Semiconductor Advanced Power MOSFET
IRF610 International Rectifier Power MOSFET
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IRF610 Intersil N-Channel Power MOSFET
IRF610B Fairchild Semiconductor 200V N-Channel MOSFET

IRF610A Datasheet

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