IRF612 Description
INCHANGE Semiconductor isc N-Channel Mosfet Transistor.
IRF612 Key Features
- Low RDS(on) -VGS Rated at ±20V -Silicon Gate for Fast Switching Speed -Rugged -Low Drive Requirements
- DESCRITION -Designed for high speed
- Part: IRF612
- Manufacturer: Inchange Semiconductor
- Size: 39.08 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild |
IRF612 | N-Channel Power MOSFET |
GE |
IRF612 | FIELD EFFECT POWER TRANSISTOR |