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IRF612 - N-Channel Mosfet Transistor

Key Features

  • Low RDS(on).
  • VGS Rated at ±20V.
  • Silicon Gate for Fast Switching Speed.
  • Rugged.
  • Low Drive Requirements isc Product Specification IRF612.

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF612 ·DESCRITION ·Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID Drain Current-Continuous 2.6 A IDM Drain Current-Single Plused 6.5 A PD Total Dissipation @TC=25℃ 43 W Tj Max.