IRF612 Overview
Key Specifications
Max Operating Temp: 150 °C
Key Features
- Polysilicon gate
- Improved stability and reliability
- No secondary breakdown
- Excellent ruggedness
- Ultra-fast switching
| Part | IRF612 |
|---|---|
| Description | FIELD EFFECT POWER TRANSISTOR |
| Category | Transistor |
| Manufacturer | GE |
| Size | 190.89 KB |
Pricing from 0.1531 USD, available from SHENGYU ELECTRONICS and Quest.
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| SHENGYU ELECTRONICS | 7693 | 1+ : 0.1531 USD 10+ : 0.15 USD 100+ : 0.15 USD 1000+ : 0.14 USD |
View Offer |
| Quest | 24 | 1+ : 2.1 USD 3+ : 1.68 USD 13+ : 1.26 USD 17+ : 1.3 USD |
View Offer |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF612 | Inchange Semiconductor | N-Channel Mosfet Transistor |
| IRF612 | Fairchild Semiconductor | N-Channel Power MOSFET |
| IRF614 | Inchange Semiconductor | N-Channel Mosfet Transistor |
| IRF614 | Intersil | N-Channel Power MOSFET |
| IRF610 | International Rectifier | Power MOSFET |