IRF612 Overview
DO D[]~[F~ FIELD EFFECT POWER TRANSISTOR IRF612,613 2.0 AMPERES 200, 150 VOLTS ROS(ON) = 2.4 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters,...
IRF612 Key Features
- Polysilicon gate
- Improved stability and reliability
- No secondary breakdown
- Excellent ruggedness
- Ultra-fast switching
- Independent of temperature
- Voltage controlled
- High transconductance
- Low input capacitance
- Reduced drive requirement
