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IRF610 - N-Channel Mosfet Transistor

Key Features

  • Low RDS(on).
  • VGS Rated at ±20V.
  • Silicon Gate for Fast Switching Speed.
  • Rugged.
  • Low Drive Requirements.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF610 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID Drain Current-Continuous 3.3 A IDM Drain Current-Single Plused 8A PD Total Dissipation @TC=25℃ 43 W Tj Max.