IRF610 Datasheet
IRF610 Datasheet (International Rectifier)
International Rectifier
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IRF610 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF610 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requiremen.
*Low RDS(on)
*VGS Rated at ±20V
*Silicon Gate for Fast Switching Speed
*Rugged
*Low Drive Requirements
*DESCRITION
*Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
*ABSOLUTE MAXIMUM R.
IRF610 Datasheet (Intersil)
Intersil
IRF610 Data Sheet June 1999 File Number 1576.3 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET desi.
* 3.3A, 200V
* rDS(ON) = 1.500Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Info.
IRF610 Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
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