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IRF6619 - DirectFET Power MOSFET

General Description

The IRF6619 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Key Features

  • IS AREA.

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Full PDF Text Transcription for IRF6619 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF6619. For precise diagrams, and layout, please refer to the original PDF.

PD - 96917 www.DataSheet4U.com DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) l l l l l l l l IRF6619 Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on...

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l l l l l l l l IRF6619 Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible  20V max ±20V max 1.65mΩ@ 10V 2.2mΩ@ 4.5V Ultra Low Package Inductance Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Optimized for High Frequency Switching above 1MHz  Ideal for CPU Core DC-DC Converters 38nC 13nC 3.5nC 18nC 22nC 2.0V Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction Losses Compatible with existing Surface Mount Techniques  MX Applicable DirectFET Outline and Substrate Outline (see p.

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