IRF6619 Datasheet - International Rectifier

DirectFET Power MOSFET

IRF6619 Features

* IS AREA LIMITED BY R DS (on) 100µsec IRF6619 ISD , Reverse Drain Current (A) 100.0 TJ = 150°C TJ = 25°C TJ = -40°C 100 10.0 10 1msec 10msec 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 VSD , Source-to-Drain Voltage (V) 1 TA = 25°C Tj = 150°C Single Pulse 0.01 0.10 1.00 10.00 100.00 0.1 VDS , Drai

IRF6619 General Description

The IRF6619 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used i.

IRF6619 Datasheet (315.20 KB)

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IRF6619

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International Rectifier

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315.20 KB

Description:

Directfet power mosfet.
PD - 96917 www.DataSheet4U.com DirectFET Power MOSFET Typical values (unless otherwise specified) l l l l l l l l IRF6619 Low Profile (<0.7 mm) .

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IRF6619 DirectFET Power MOSFET International Rectifier

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IRF6619 Features

IRF6619 General Description

Datasheet Details

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