Datasheet Details
| Part number | IRF6619PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 314.09 KB |
| Description | DirectFET Power MOSFET |
| Datasheet |
 IRF6619PbF Datasheet
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General Description
The IRF6619PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
Key Features
- = 25°C TJ = -40°C 100 10.0 10 1msec 10msec 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 VSD , Source-to-Drain Voltage (V) 1 TA = 25°C Tj = 150°C Single Pulse 0.01 0.10 1.00 10.00 100.00 0.1 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 180 VGS(th) Gate threshold Voltage (V) 2.5 Fig11. Maximum Safe Operating Area 160 140 ID , Drain Current (A).