Datasheet Details
| Part number | IRF6611PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 288.60 KB |
| Description | DirectFET Power MOSFET |
| Datasheet |
 IRF6611PbF Datasheet
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General Description
The IRF6611PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Key Features
- rce Voltage (V) VGS(th) Gate threshold Voltage (V) 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 ID, Drain Current (A) ID = 50µA T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 1400 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltage vs. Temperature 1200 1000 800 600 400 200 0 25 50 75 ID 11A 13A BOTTOM 22A TOP 100 125 150 Starting T J , Junctio.