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IRF6618 - HEXFET Power MOSFET

General Description

The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Key Features

  • urrent Transformer.
  • D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt ‚ - -.
  • +  RG.
  • dv/dt controlled by RG.
  • Driver same type as D. U. T.
  • I SD controlled by Duty Factor "D".
  • D. U. T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
  • VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Te.

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Full PDF Text Transcription for IRF6618 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF6618. For precise diagrams, and layout, please refer to the original PDF.

IRF6618/IRF6618TR1 VDSS Application Specific MOSFETs Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sid...

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ction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l l PD - 94726D HEXFET® Power MOSFET RDS(on) max 2.2mΩ@VGS = 10V 3.4mΩ@VGS = 4.5V Qg 43 nC 30V MT Applicable DirectFET Package/Layout Pad (see p.8,9 for details) DirectFET™ ISOMETRIC SQ SX ST MQ MX MT Description The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

More Datasheets from International Rectifier (now Infineon)

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