Download IRF6618TR1 Datasheet PDF
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IRF6618TR1 Description

The IRF6618 bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application...

IRF6618TR1 Key Features

  • Application Specific MOSFETs
  • Ideal for CPU Core DC-DC Converters
  • Low Conduction Losses
  • Low Switching Losses
  • Low Profile (<0.7 mm)
  • Dual Sided Cooling patible