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IRF6618TR1 - HEXFET Power MOSFET

This page provides the datasheet information for the IRF6618TR1, a member of the IRF6618 HEXFET Power MOSFET family.

Datasheet Summary

Description

The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

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PD - 94726D IRF6618/IRF6618TR1 HEXFET® Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques Applicable DirectFET Package/Layout Pad (see p.8,9 for details) VDSS 30V RDS(on) max 2.2mΩ@VGS = 10V 3.4mΩ@VGS = 4.5V Qg 43 nC MT DirectFET™ ISOMETRIC SQ SX ST MQ MX MT Description The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
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