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IRF6618TR1 - HEXFET Power MOSFET

Download the IRF6618TR1 datasheet PDF. This datasheet also covers the IRF6618 variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

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Note: The manufacturer provides a single datasheet file (IRF6618_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IRF6618TR1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF6618TR1. For precise diagrams, and layout, please refer to the original PDF.

PD - 94726D IRF6618/IRF6618TR1 HEXFET® Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l ...

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ore DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques Applicable DirectFET Package/Layout Pad (see p.8,9 for details) VDSS 30V RDS(on) max 2.2mΩ@VGS = 10V 3.4mΩ@VGS = 4.5V Qg 43 nC MT DirectFET™ ISOMETRIC SQ SX ST MQ MX MT Description The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

More Datasheets from International Rectifier (now Infineon)

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