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IRF6611 Datasheet Directfet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 96978A IRF6611 DirectFET™ Power MOSFET Low Profile (<0.7 mm) Dual Sided Cooling patible Ultra Low Package Inductance Optimized for High Frequency Switching above 1MHz Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for CPU Core DC-DC Converters 37nC 12nC 3.3nC 16nC 23nC 1.7V Optimized for SyncFET Socket of Sync. Buck Converter Low Conduction Losses patible with Existing Surface Mount Techniques MX Applicable DirectFET Outline and Substrate Outline (see p.

General Description

The IRF6611 bines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

IRF6611 Distributor