Description
The IRF6611PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- rce Voltage (V)
VGS(th) Gate threshold Voltage (V)
140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150
ID, Drain Current (A)
ID = 50µA
T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
1400
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Threshold Voltage vs. Temperature
1200 1000 800 600 400 200 0 25 50 75
ID 11A 13A BOTTOM 22A TOP
100
125
150
Starting T J , Junctio.
IRF6611TRPbF Datasheet
