Datasheet Details
| Part number | IRF6611TRPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 288.60 KB |
| Description | DirectFET Power MOSFET |
| Datasheet | IRF6611TRPbF IRF6611PbF Datasheet (PDF) |
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Overview: PD - 97216 IRF6611PbF IRF6611TRPbF .. RoHs pliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling patible l patible with existing Surface Mount Techniques l DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 12nC RDS(on) Qgs2 3.3nC RDS(on) Qoss 23nC 30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V Qrr 16nC Vgs(th) 1.7V 37nC Applicable DirectFET Outline and Substrate Outline (see p.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRF6611TRPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 288.60 KB |
| Description | DirectFET Power MOSFET |
| Datasheet | IRF6611TRPbF IRF6611PbF Datasheet (PDF) |
|
|
|
The IRF6611PbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.
Application note AN-1035 is followed regarding the manufacturing methods and processes.
| Part Number | Description |
|---|---|
| IRF6611 | DirectFET Power MOSFET |
| IRF6611PbF | DirectFET Power MOSFET |
| IRF6610 | HEXFET Power MOSFET Silicon Technology |
| IRF6612 | HEXFET Power MOSFET |
| IRF6612PbF | MOSFET |
| IRF6612TR1 | HEXFET Power MOSFET |
| IRF6613 | HEXFET Power MOSFET |
| IRF6613PBF | Power MOSFET |
| IRF6613TRPBF | Power MOSFET |
| IRF6614 | DirectFET Power MOSFET |