IRF6618PbF
IRF6618PbF is Power MOSFET manufactured by International Rectifier.
Description
The IRF6618Pb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6618Pb F balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6618Pb F has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM EAS
Gate-to-Source Voltage e Continuous Drain Current, VGS @ 10V e Continuous Drain Current, VGS @ 10V f Continuous Drain Current, VGS @ 10V g Pulsed Drain Current h Single Pulse Avalanche Energy Ãg Avalanche Current
Max. 30 ±20 170 30 24 240 210 24
Units V
A m J A
Typical RDS(on) (mΩ) VGS, Gate-to-Source Voltage (V)
ID = 30A
4 TJ = 125°C
TJ = 25°C
0 2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the Direct FET Website.
- Surface mounted on 1 in. square Cu board, steady state.
.irf.
6.0 5.0 ID= 24A
VDS= 24V VDS= 15V
0.0...
