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IRF6610 Datasheet Hexfet Power MOSFET Silicon Technology

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 97012 .. IRF6610 RDS(on) Qoss 5.9nC DirectFET™ Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free Low Profile (<0.7 mm) Dual Sided Cooling patible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses patible with existing Surface Mount Techniques VDSS Qg tot VGS Qgd 3.6nC RDS(on) Qgs2 1.3nC 20V max ±20V max 5.2mΩ@ 10V 8.2mΩ@ 4.5V Qrr 6.4nC Vgs(th) 2.1V 11nC SQ Applicable DirectFET Outline and Substrate Outline (see p.

General Description

The IRF6610 bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Key Features

  • ypical Source-Drain Diode Forward Voltage 70 60 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 60 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 50 40 30 20 10 0 25 50 75 3.6.

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