IRF6610 - HEXFET Power MOSFET Silicon Technology

Product Overview

International Rectifier

Datasheet Details

Part number	IRF6610
Manufacturer	International Rectifier
File Size	266.29 KB
Description	HEXFET Power MOSFET Silicon Technology
Datasheet	IRF6610 Datasheet
Additional preview pages of the IRF6610 datasheet.

Product details

Description

The IRF6610 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

ypical Source-Drain Diode Forward Voltage 70 60 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 60 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 50 40 30 20 10 0 25 50 75 3.6.

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Published: Apr 25, 2010 |