IRF6610
IRF6610 is HEXFET Power MOSFET Silicon Technology manufactured by International Rectifier.
- 97012
..
RDS(on)
Qoss
5.9nC
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
Lead and Bromide Free Low Profile (<0.7 mm) Dual Sided Cooling patible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses patible with existing Surface Mount Techniques
VDSS
Qg tot
Qgd
3.6nC
RDS(on)
Qgs2
1.3nC
20V max ±20V max 5.2mΩ@ 10V 8.2mΩ@ 4.5V
Qrr
6.4nC
Vgs(th)
2.1V
11nC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP
DirectFET™...
