Datasheet Details
| Part number | IRF6612PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 237.18 KB |
| Description | MOSFET |
| Datasheet |
 IRF6612PbF Datasheet
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General Description
The IRF6612PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Key Features
- RF6612PbF Current Regulator Same Type as D. U. T. 50KΩ 12V .2µF .3µF D. U. T. + -VDS VGS 3mA IG ID Current Sampling Resistors Fig 14a. Gate Charge Test Circuit Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 14b. Gate Charge Waveform 15V VDS L VRGGS 20V tp D. U. T IAS 0.01Ω DRIVER + - VDD A Fig 15a. Unclamped Inductive Test Circuit LD VDS + VDD - VGS Pulse Width < 1µs Duty Factor < 0.1% D. U. T Fig 16a. Switching Time Test Circuit 6 V(BR)DSS tp IAS Fig 15b. Unclamped Inductive W.