Datasheet Details
| Part number | IRF6612TR1 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 200.07 KB |
| Description | HEXFET Power MOSFET |
| Datasheet | IRF6612TR1_InternationalRectifier.pdf |
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Overview: PD - 95842 IRF6612/IRF6612TR1 VDSS l HEXFET® Power MOSFET Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling patible l patible with existing Surface Mount Techniques 30V 3.3mΩ@VGS = 10V 4.4mΩ@VGS = 4.5V RDS(on) max Qg(typ.) 30nC MX Applicable DirectFET Package/Layout Pad (see p.
| Part number | IRF6612TR1 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 200.07 KB |
| Description | HEXFET Power MOSFET |
| Datasheet | IRF6612TR1_InternationalRectifier.pdf |
|
|
|
The IRF6612 bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
| Part Number | Description |
|---|---|
| IRF6612 | HEXFET Power MOSFET |
| IRF6612PbF | MOSFET |
| IRF6610 | HEXFET Power MOSFET Silicon Technology |
| IRF6611 | DirectFET Power MOSFET |
| IRF6611PbF | DirectFET Power MOSFET |
| IRF6611TRPbF | DirectFET Power MOSFET |
| IRF6613 | HEXFET Power MOSFET |
| IRF6613PBF | Power MOSFET |
| IRF6613TRPBF | Power MOSFET |
| IRF6614 | DirectFET Power MOSFET |