Datasheet Specifications
- Part number
- IRF6631
- Manufacturer
- International Rectifier
- File Size
- 265.98 KB
- Datasheet
- IRF6631_InternationalRectifier.pdf
- Description
- DirectFET Power MOSFET
Description
PD - 97183 www.DataSheet4U.com IRF6631 RDS(on) Qoss 7.3nC DirectFET Power MOSFET Typical values (unless otherwise specified) l l l l l l l l l R.
Features
* = 150°C Single Pulse 0.0 0.1 1.0 10 100 0.1 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 50 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case TemperaturApplications
* Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques VDSS Qg tot VGS Qgd 4.4nC RDS(on) Qgs2 1.1nC 30V max ±20V max 6.0mΩ @ 10V 8.3mΩ @ 4.5V Qrr 10nC Vgs(th) 1.8V 12nC SQ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX STIRF6631 Distributors
📁 Related Datasheet
📌 All Tags