IRF6631 - DirectFET Power MOSFET

International Rectifier

IRF6631 Datasheet Preview — Preview of IRF6631 PDF

Datasheet Details

Part number	IRF6631
Manufacturer	International Rectifier ↗
File Size	265.98 KB
Description	DirectFET Power MOSFET
Datasheet	IRF6631_InternationalRectifier.pdf

IRF6631 Product details

Description

The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile.

Features

= 150°C Single Pulse 0.0 0.1 1.0 10 100 0.1 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 50 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 50µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 60 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typ.

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Published: Apr 23, 2010 |