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IRF6631 - DirectFET Power MOSFET

Description

The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile.

Features

  • = 150°C Single Pulse 0.0 0.1 1.0 10 100 0.1 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 50 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 50µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 60 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typ.

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PD - 97183 www.DataSheet4U.com IRF6631 RDS(on) Qoss 7.3nC DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) l l l l l l l l l RoHS compliant containing no lead or bromide  Low Profile (<0.6 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET applications  Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  VDSS Qg tot VGS Qgd 4.4nC RDS(on) Qgs2 1.1nC 30V max ±20V max 6.0mΩ @ 10V 8.3mΩ @ 4.5V Qrr 10nC Vgs(th) 1.8V 12nC SQ Applicable DirectFET Outline and Substrate Outline (see p.
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