IRF6631TRPBF Datasheet | International Rectifier

- 97217 Direct FET™ Power MOSFET ‚ Ro Hs pliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Switching and Conduction Losses l Low Profile (<0.7mm) l Dual Sided Cooling patible  l patible with existing Surface Mount Techniques  l IRF6631Pb F IRF6631TRPb F RDS(on) Qgs2 1.1n C Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 4.4n C RDS(on) Qoss 7.3n C 30V max ±20V max 6.0mΩ @ 10V 8.3mΩ @ 4.5V Qrr 10n C Vgs(th) 1.8V 12n C Applicable Direct FET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Direct FET™ ISOMETRIC Description The IRF6631Pb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6631Pb F balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6631Pb F has been optimized for parameters that are critical in synchronous buck converter’s Ctrl FET...